2 edition of Longitudinal magnetoresistance in polar semiconductors found in the catalog.
Longitudinal magnetoresistance in polar semiconductors
Robert L Peterson
by U.S. National Bureau of Standards, For sale by the Supt. of Docs., U.S. Govt. Print. Off. in [Washington]
Written in English
Includes bibliographical references (p. 40-43)
|Statement||Robert L. Peterson|
|Series||NBS technical note -- 614|
|The Physical Object|
|Pagination||iii, 43 p. :|
|Number of Pages||43|
In high-mobility Hg 1−x Cd x Te (x=), the physical giant magnetoresistance (GMR), due to the orbital motion of the carriers in the applied magnetic field, is apparent at high magnetic field (H>1/μ e). At low field (Hsemiconductor. In previous work, we have presented a model which accounts. Books. Publishing Support. Login. This rather large amplitude in the longitudinal magnetoresistance is ascribed to the double minimum structure of the energy of the Landau levels. A displaced maxwellian model for hot electrons in polar semiconductors is used to analyse the detailed time dependence of optical and acoustic phonon.
Energy Band Structures of Semiconductors 1 Free-Electron Model 1 Bloch Theorem 3 Non-polar Optical Phonon Scattering Longitudinal Magnetoresistance Configuration Transverse Magnetoresistance Configuration Longitudinal magnetoresistance (LMR) of TaAs 2. Figure 4a shows the band structure and density of states (DOS) calculated with spin-orbit coupling (SOC). The semimetallic character can be seen by the low DOS at the Fermi level and the presence of small electron- and hole-bands.
15th on High Magnetic Fields in Semiconductor Physics Semimag15, 5 augustus Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed.
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OFSTAKDJ^BS JUN UNITEDSTATESDEPARTMENTOFCOMMERCE on,Secretary NATIONALBUREAUOFSTANDARDS•omb,Director 'Q-•M. The displaced-Maxwellian distribution function is used to study longitudinal magnetoresistance in polar semiconductors, when several carrier scattering mechanisms are simultaneously active.
Although both the B=0 and the quantum-limit expressions for the resistance are largely the same as those obtained from the Boltzmann equation, numerical calculations show that the Cited by: Effect of Non-polar Longitudinal Optical Phonons on Domain Wall Resistance in Diluted Magnetic Semiconductor Nanowires Article in Journal of Superconductivity and Novel Magnetism 25(5)– The magnetophonon effect in nonpolar nondegenerate semiconductors is investigated by solving the Boltzmann equation exactly in the Ohmic limit for combined optical- and acousticphonon scattering of carriers in parallel electric and magnetic fields.
The solution is used in computing the longitudinal magnetoresistance at several temperatures and ratios of acousticto optical-phonon scattering. In the present paper, the effect of non-polar longitudinal optical phonons on domain wall resistance has been studied using the semiclassical approach.
The analysis has been based on the Boltzmann transport equation, within the relaxation time approximation. We have determined the magnetoresistance of domain wall in nanowires based on diluted magnetic semiconductors. Solid-State Electronics. Vol. 21, pp. Pergamon Press. Printed in Great Britain APPLICATION OF A NEW HIGH FIELD QUANTUM MAGNETO-TRANSPORT THEORY FOR POLAR SEMICONDUCTORS F.
BELEZNAY and M. SERYI Research Institute for Technical Physics, Hungarian Academy of Sciences, Budapest, Ujpest 1, Pf. 76, Hungary Abstract-High field. Hishiyama and Kaburagi found that Δρ/ρ 0 can be measured for most carbon materials even if B is applied parallel to I (longitudinal magnetoresistance) .
Through the Δ ρ / ρ 0 data at 77K for various carbon materials, Δ ρ / ρ 0 is shown to characterize the structural features of carbon materials, ie, crystallinity and microtexture .
Magnetoresistance is a phenomenon in which the electrical resistivity of a material changes in the presence of an external magnetic eld. Magnetoresistance was discovered by Lord Kelvin(William Thomson) in Albert Fert and Peter Grunberg were jointly awarded the Nobel Prize for the discovery of Giant Magnetoresistance in Discover Book Depository's huge selection of Robert L Peterson books online.
Free delivery worldwide on over 20 million titles. Longitudinal Magnetoresistance in Polar Semiconductors (Classic Reprint) Robert L Peterson. 16 Feb Hardback. Longitudinal Magnetoresistance in Polar Semiconductors (Classic Reprint) Robert L Peterson.
Longitudinal magnetoresistance in polar semiconductors / By Robert L. Peterson, Institute for Basic Standards (U.S.). Quantum Electronics Division. and United States. Wadehra, N., Tomar, R., Varma, R.M.
et al. Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO 3-KTaO 3 with strong spin-orbit coupling. Nat Com ( Since its discovery by William Thomson inthe anisotropic magnetoresistance (AMR) effect, where the longitudinal resistance of ferromagnetic metals changes when the magnetic field is changed.
Magnetoresistance in three-dimensional systems Introduction Magnetoresistance is a general term for the changes in the components of the resistivity and conductivity tensors of materials caused by the application of magnetic ﬁeld.
We are going to treat the magnetore-sistance of metals in a quite general and simple manner. Magnetoresistance is the tendency of a material (often ferromagnetic) to change the value of its electrical resistance in an externally-applied magnetic are a variety of effects that can be called magnetoresistance.
Some occur in bulk non-magnetic metals and semiconductors, such as geometrical magnetoresistance, Shubnikov de Haas oscillations, or the common positive.
In this context, a nonlinear magnetoresistance (NLMR) that scales linearly with the applied electric and magnetic fields has been recently discovered independently in a polar semiconductor 6 and a. Magnetoresistance Transverse Magnetoresistance Effect Longitudinal Magnetoresistance Effect Behavior of Typical Semiconductors 5.
Quantum Effects in Large Magnetic Fields Shubnikov--de Haas Oscillation Freeze-Out Effects Magnetophonon Effect 6. Magnetotransport in Low-Dimensional Systems and in Heterostructures Longitudinal Orbital magnetoresistance Transverse Hall effect Nernst effect (transverse voltage with longitudinal heat current) Semiconductors “Heat” of the carrier is a distance between Fermi energy and valence and conduction band edges Several text books on methods of measuring Hall effect.
Introduction The hole-mediated ferromagnetism occurring in the diluted magnetic semiconductor (DMS) (Ga, Mn)As offers the possibility of controlling its magnetic properties, e.g., the magnetic transport properties, 1–4 the magnetic anisotropy (ref.
5–10) and the anisotropic magnetoresistance (AMR). 11–13 In particular, DMSs are suitable materials for the study of AMR due to the. Secondly, in materials of a polar nature the coupling of carriers to the optical modes is particularly strong and the resulting scattering probabilities and changes in effective mass can be large.
Nevertheless, significant effects produced by the optical modes may be observed in homopolar semiconductors such as silicon and germanium.creasing field.
Ordinary magnetoresistance is longitudinal when the B field is~parallel to the direction of the electric current and transverse when the two are orthogonal. In ordinary MR the transverse effect is generally observed to be larger than the longitudinal effect.
The.Abstract. The transverse and the longitudinal magnetoresistance of Hg 1−x Cd x Te with x = and x = have been measured in pulsed magnetic fields up to 35 T in the temperature range K – K.
At the higher temperatures, the samples with x = follow a power law Δϱ/ϱ o ∼ Ba throughout the magnetic field range. At temperatures lower than K, there is a break in the.