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Thursday, July 30, 2020 | History

1 edition of Wide gap II-VI semiconductors found in the catalog.

Wide gap II-VI semiconductors

Wide gap II-VI semiconductors

proceedings of an E-MRS Advanced Research Workshop, Montpellier, 16-18 January 1991.

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Published by IOP Publishing in Bristol .
Written in English


Edition Notes

SeriesSemiconductor science and technology -- vol. 6(9A)
ContributionsEuropean Materials Research Society.
The Physical Object
Pagination163p. :
Number of Pages163
ID Numbers
Open LibraryOL20154112M

Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental. Properties of Wide Bandgap II-VI Semiconductors Bhargava, Rameshwar(eds.) Semiconductors comprising elements from groups II and VI of the periodic table and having a large energy gap (e.g. ZnSe) are generating intense R&D activity world-wide largely as a result of their blue green diodes.

Main topics are doping of wide gap II-VI compounds, quantum wires and quantum dots, exitonic gain as well as basic processes in lasers including the microgun laser. New aspects covered are . The book also presents new directions that have potential, future applications in optoelectronics for II-VI materials. In particular, it discusses the status of dilute magnetic semiconductors for mango-optical and electromagnetic devices, nonlinear optical properties, photorefractive effects and new materials and physics phenomena, such as self.

|a HgCdTe growth and detector technology / Dennis Edwall and Jagmohan Bajaj -- Blue-green semiconductor lasers / Kazushi Nakano -- Molecular beam epitaxy of wide gap II-VI compounds / Takafumi Yao -- Optical properties and electronic structure of wide band gap II-VI semiconductors / Isaac Hernandez-Calderon -- Nonlinear optics and propagation.   Wide Bandgap Semiconductors - Growth, Processing and Applications Details This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications.


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Wide gap II-VI semiconductors Download PDF EPUB FB2

The use of wide gap semiconductors leads to less thermal quenching of the electroluminescence. However, O doped Si does lead to state-of-the-art EL devices.

Because of the intense current research in SiC and III–V nitride semiconductors, improvements in the crystal quality and in the processing technology of these materials are likely to occur. Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a relatively large band gap compared to conventional semiconductors.

Conventional semiconductors like silicon have a bandgap in the range of 1 - electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range of 2 - 4 eV. The first blue-green laser diodes were demonstrated in our laboratories in early April using wide band gap II–VI semiconductors.

Since then, devices with emission wavelengths from to nm have been obtained in the pulsed mode at room temperature with threshold current densities about A/cm uous wave devices have also been operated at 80 K emitting more than 3 mW/facet.

99 rows  A compound semiconductor is a semiconductor compound composed of chemical elements. Get this from a library. Properties of wide bandgap II-VI semiconductors. [Rameshwar Bhargava; INSPEC (Information service);] -- This volume pools the present research knowledge regarding semiconductors which comprise elements from groups II and VI of the periodic table.

These semiconductors are generating intense research. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the Wide gap II-VI semiconductors book of considering II-VI substrates for the novel epitaxial techniques such as Brand: Springer US.

acterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, Ill-V, or even narrow band gap II-VI semiconductors because of the high melting tem-peratures as well as the specialized applicationsFile Size: 1MB.

Book Description. II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors.

Specifically, the growth, charactrtization, materials and device issues for these two applications are described. Add tags for "Wide gap II-VI semiconductors: proceedings of the E-MRS Advanced Research Workshop, Montpellier, January, ".

Be the first. Similar Items. This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices.

It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs.

Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths. Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds.

The book illustrates up-to-date experimental Format: Hardcover. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths.

Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds.

The book illustrates up-to-date experimental Manufacturer: CRC Press. This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme.

A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the. Epitaxial Growth of Thin Films And Quantum Structures of II-VI Visible-Band Gap Semiconductors Isaac Hernandez-Calderon MBE-grown wide band gap II-VI semiconductors for intersubband device applications Aidong Shen ZnO Materials and Devices grown by MBE Ümit Özgür Epitaxial Systems Combining Oxides and Semiconductors.

II-VI Semiconductor Materials and Their Applications deals with II-VI compound semiconductors and the status of the two areas of current optoelectronics applications: blue-green emitters and IR detectors. Specifically, the growth, charactrtization, materials and device issues for these two applications are by: Wide-bandgap II-VI compounds are been applied to optoelectronic devices, especially light-emitting devices in the short-wavelength region of visible light, because of their direct gap and suitable bandgap energies.

Many methods have been extensively applied to grow high-quality films and bulk single crystals from the vapor and liquid by: Wide-bandgap II–VI compounds are expected to be one of the most vital materials for high-performance optoelectronics devices such as light-emitting diodes (LED s) and laser diodes (LD s) operating in the blue or ultraviolet spectral onally, the high ionicity of these compounds makes them good candidates for high electro-optical and electromechanical by: Wide Gap II-VI Semiconductors, Proceedings of the E-MRS Advanced Research Workshop, Montpellier, January Triboulet, R., Aulombard, R.

Published by Taylor & Francis (). Almost all the semiconductors of practical interest are the group-IV, III-V and II-VI semiconductors and the range of technical applications of such semiconductors is extremely wide.

The purpose of this book is twofold: * to discuss the key properties of the group-IV, III-V and II-VI semiconductors * to systemize these properties from a solid-state physics aspect The majority of the Author: Sadao Adachi.

J. Han and R.L. Gunshor, MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors.S. Fujita and S. Fujita, Growth and Characterization of ZnSe-based II-VI Semiconductors by and L.A.

Kolodziejski, Gaseous Source UHV Epitaxy Technologies for Wide Bandgap II-VI Semiconductors.C.G. Van de Walle, Doping of Wide-Band-Gap II-VI Compounds- Book Edition: 1.Special Book Collections II-VI Compounds and Semimagnetic Semiconductors.

Book Cover. Description: Main topics are doping of wide gap II-VI compounds, quantum wires and quantum dots, exitonic gain as well as basic processes in lasers including the microgun laser. New aspects covered are dephasing phenomena.Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white Price: $